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| NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Breakdown Voltage D Large Current Capacity D Isolated Package Applications: D Color TV Audio Output D Converters D Inverters Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 120V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 10mA VCE = 10V, IC = 50mA Min - - 140 90 - Typ - - - - 120 Max 1.0 1.0 400 - - MHz Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Output Capacitance NTE2519 NTE2520 Collector to Emitter Saturation Voltage NTE2519 NTE2520 Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Rise Time Storage Time NTE2519 NTE2520 Fall Time NTE2519 NTE2520 tf VBE(sat) IC = 500mA, IB = 50mA V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg IC = 10A, IB1 = 10A, IB2 = 700mA, Note 1 VCE(sat) IC = 500mA, IB = 50mA Symbol Cob Test Conditions VCB = 10V, f = 1MHz Min - - - - - 180 160 6 - - - - - Typ 14 22 0.13 0.2 0.85 - - - 0.04 1.2 0.7 0.08 0.04 Max - - 0.45 0.5 1.2 - - - - - - - - Unit pF pF V V V V V V s s s s s Note 1. Pulse Width = 20s, Duty Cycle 1%. .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4) |
Price & Availability of NTE2520
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